Vacuum silicon carbide sintering furnace

Main technical data of Vacuum silicon carbide sintering furnace
Model	Effective working dimension mm(Φ×H)	Max temperature (℃)	Ultimate pressure (Pa)	Pressure rising rate (Pa/h)	IF power (KW)	IF frequency (HZ)	Temperature Uniformity (℃)
RHIS-160	500×800	2400	7×10-1	1.5	160	2000	±10
RHIS-250	650×800	2400	7×10-1	1.5	250	2000	±10
RHIS-350	900×1200	2400	7×10-1	2	350	1500	±10
RHIS-500	1200×1500	2400	7×10-1	2	500	1500	±10
RHIS-750	1500×2000	2400	7×10-1	2	750	1000	±10

The working principle of the equipment is under the condition of vacuum or protective atmosphere, using the method of medium frequency induction heat the graphite heating body placed in the induction heating coil,then the graphite heating body produces high temperature and radiate to the workpiece and make it to the required temperature.

It is mainly used in new materials silicon carbide reaction sintering.

Sintering temperature up to 2500 ℃. It is mainly composed by Latex system, dust removal system, rapid cooling system (special air duct), the heating chamber, vacuum system and heating system, etc.

It has vertical, horizontal, bottom three types.

Location : Room 502,NO.1299 New Jinqiao Road, Pudong New Area, Shanghai, China, 201206 ShangHai,
Contact : Kevin Liu, 0086 21 50878190

SIMUWUfurnace

3.7/5

Retail

Registered since 20 April 2015

Identification number of the company : 09369948-9

Send email to SIMUWUfurnace

SIMUWUfurnace

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Vacuum silicon carbide sintering furnace

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