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Vacuum silicon carbide sintering furnace
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Main technical data of Vacuum silicon carbide sintering furnace |
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Model |
Effective working dimension mm(Φ×H) |
Max temperature (℃) |
Ultimate pressure (Pa) |
Pressure rising rate (Pa/h) |
IF power (KW) |
IF frequency (HZ) |
Temperature Uniformity (℃) |
|
RHIS-160 |
500×800 |
2400 |
7×10-1 |
1.5 |
160 |
2000 |
±10 |
|
RHIS-250 |
650×800 |
2400 |
7×10-1 |
1.5 |
250 |
2000 |
±10 |
|
RHIS-350 |
900×1200 |
2400 |
7×10-1 |
2 |
350 |
1500 |
±10 |
|
RHIS-500 |
1200×1500 |
2400 |
7×10-1 |
2 |
500 |
1500 |
±10 |
|
RHIS-750 |
1500×2000 |
2400 |
7×10-1 |
2 |
750 |
1000 |
±10 |
The working principle of the equipment is under the condition of vacuum or protective atmosphere, using the method of medium frequency induction heat the graphite heating body placed in the induction heating coil,then the graphite heating body produces high temperature and radiate to the workpiece and make it to the required temperature.
It is mainly used in new materials silicon carbide reaction sintering.
Sintering temperature up to 2500 ℃. It is mainly composed by Latex system, dust removal system, rapid cooling system (special air duct), the heating chamber, vacuum system and heating system, etc.
It has vertical, horizontal, bottom three types.
Contact : Kevin Liu, 0086 21 50878190
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