Silicon carbide vacuum sintering furnace
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Silicon carbide vacuum sintering furnace

Main technical data of Silicon carbide sintering furnace
Model Effective working Dimension
(mm)		 Max temperature
(℃)		 Ultimate pressure
(pa)		 Pressure rising rate(pa/h) Temperature Uniformity(℃)
RVSG-446 400×400×600 1800 6×10-1 0.5 ±5
RVSG-559 500×500×900 1800 2×10-1 0.5 ±5
RVSG-4413 400×400×1300 1800 2×10-1 0.5 ±5
RVSG-8810 800×800×1000 1800 2×10-1 0.5 ±5
RVSG-8832 800×800×3200 1800 2×10-1 0.5 ±5
Vertical RVSG-4555 Φ450×550 1800 2×10-1 0.5 ±5
Vertical RVSG-5070 Φ500×700 1800 2×10-1 0.5 ±5


It is used in New materials reaction sintered silicon carbide. The maximum temperature is 1800℃. With glue, dust removal system, complete evacuation and sintering meanwhile, It has horizontal and vertical two types.

Location : Room 502,NO.1299 New Jinqiao Road, Pudong New Area, Shanghai, China, 201206 ShangHai,
Contact : Kevin Liu, 0086 21 50878190

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Silicon carbide vacuum sintering furnace

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